Advances in GeSn alloys for MIR applications-Reference-Cited by-同舟云学术

Advances in GeSn alloys for MIR applications

Published:2024-02 Issue: Volume:58 Page:101233
ISSN:1569-4410
Container-title:Photonics and Nanostructures - Fundamentals and Applications
language:en
Short-container-title:Photonics and Nanostructures - Fundamentals and Applications

Author:

Reboud V.,Concepción O.,Du W.,El Kurdi M.,Hartmann J.M.,Ikonic Z.,Assali S.,Pauc N.,Calvo V.,Cardoux C.,Kroemer E.,Coudurier N.,Rodriguez P.,Yu S.-Q.,Buca D.,Chelnokov A.

Publisher

Elsevier BV

Reference90 articles.

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2. Mid-infrared integrated photonics on silicon: a perspective;Lin;Nanophotonics,2018

3. Mid-infrared silicon photonic waveguides and devices;Zou;Photon. Res.,2018

4. Si–Ge–Sn alloys grown by chemical vapour deposition: a versatile material for photonics, electronics, and thermoelectrics;Grützmacher;Appl. Phys. A,2023

5. Lasing in Group-IV Materials

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1. Modeling and Design of GeSn Avalanche Photodiodes With High Tin Content for Applications at 3.3 μm;IEEE Journal of Selected Topics in Quantum Electronics;2025-01

2. Optimization of GeSn nanostructures via tuning of femtosecond laser parameters;Applied Surface Science;2025-01

3. Ex-situ n-type doped carrier-injection layers in direct bandgap GeSn LEDs;Materials Science in Semiconductor Processing;2024-11

4. Preface to the special issue in micro and nano structured mid-IR to terahertz materials and devices;Photonics and Nanostructures - Fundamentals and Applications;2024-09

5. Structural changes in Ge1−xSnx and Si1−x−yGeySnx thin films on SOI substrates treated by pulse laser annealing;Journal of Applied Physics;2024-08-05