Modeling and Design of GeSn Avalanche Photodiodes With High Tin Content for Applications at 3.3 μm-Reference-Cited by-同舟云学术

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Modeling and Design of GeSn Avalanche Photodiodes With High Tin Content for Applications at 3.3 μm

Published:2025-01 Issue:1: SiGeSn Infrared Photon Volume:31 Page:1-9
ISSN:1077-260X
Container-title:IEEE Journal of Selected Topics in Quantum Electronics
language:
Short-container-title:IEEE J. Select. Topics Quantum Electron.

Author:

Finazzi Lorenzo¹^ORCID,Giani Raffaele²^ORCID,Concepción Omar³^ORCID,Buca Dan³^ORCID,Reboud Vincent⁴^ORCID,Isella Giovanni²^ORCID,Tosi Alberto¹^ORCID

Affiliation:

1. Dipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano, Milano, Italy

2. Dipartimento di Fisica, Politecnico di Milano, Milano, Italy

3. Peter-Grünberg-Institute (PGI-9) and JARA-Fundamentals of Future Information Technologies, Forschungszentrum Jülich, Germany

4. CEA Leti, Grenoble, France

Funder

European Union's Horizon Europe Research and Innovation Program

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx8/2944/10663286/10628039.pdf?arnumber=10628039

Reference33 articles.

1. Backside illuminated In(Ga)AsInAsSbP DH photodiodes for methane sensing at 3.3 um;Matveev,2002

2. State-of-the-Art of Analytical Techniques to Determine Food Fraud in Olive Oils

3. History of infrared detectors

4. Advances in GeSn alloys for MIR applications

5. Lasing in direct-bandgap GeSn alloy grown on Si

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