CMOS-Compatible Bias-Tunable Dual-Band Detector Based on GeSn/Ge/Si Coupled Photodiodes-Reference-Cited by-同舟云学术

CMOS-Compatible Bias-Tunable Dual-Band Detector Based on GeSn/Ge/Si Coupled Photodiodes

Published:2021-07-12 Issue:7 Volume:8 Page:2166-2173
ISSN:2330-4022
Container-title:ACS Photonics
language:en
Short-container-title:ACS Photonics

Author:

Talamas Simola Enrico¹²^ORCID,Kiyek Vivien²,Ballabio Andrea¹^ORCID,Schlykow Viktoria²,Frigerio Jacopo¹,Zucchetti Carlo¹,De Iacovo Andrea³^ORCID,Colace Lorenzo³,Yamamoto Yuji⁴,Capellini Giovanni⁴⁵^ORCID,Grützmacher Detlev²,Buca Dan²,Isella Giovanni¹^ORCID

Affiliation:

1. LNESS Dipartimento di Fisica, Politecnico di Milano, Via Anzani 42, 22100 Como, Italy

2. Peter Grünberg Institute 9 (PGI-9) and JARA-Fundamentals of Future Information Technologies (JARA-FIT), Forschungszentrum Jülich, 52425 Jülich, Germany

3. Dipartimento di Ingegneria, Università Roma Tre, Via Vito Volterra 62, 00146 Rome, Italy

4. IHP − Leibniz-Institut für innovative Mikroelektronik, Im Technologiepark 25, D-15236 Frankfurt, Oder, Germany

5. Dipartimento di Scienze, Università Roma Tre, V.le G. Marconi 446, 00146 Roma, Italy

Funder

Bundesministerium fÃ¼r Bildung und Forschung

H2020 Future and Emerging Technologies

Publisher

American Chemical Society (ACS)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Biotechnology,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsphotonics.1c00617

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