Next generation of Ge1−ySny (y = 0.01-0.09) alloys grown on Si(100) via Ge3H8 and SnD4: Reaction kinetics and tunable emission
Author:
Affiliation:
1. Department of Chemistry and Biochemistry, Arizona State University, Tempe, Arizona 85287-1506, USA
2. Department of Physics, Arizona State University, Tempe, Arizona 85287-1504, USA
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Reference27 articles.
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