Lattice constant and substitutional composition of GeSn alloys grown by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4816660
Reference26 articles.
1. Interband Transitions inSnxGe1−xAlloys
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3. Advances in SiGeSn technology
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