TIN-BASED GROUP IV SEMICONDUCTORS: New Platforms for Opto- and Microelectronics on Silicon

Abstract

▪ Abstract  New classes of Sn-containing group IV semiconductors are described. Novel CVD routes lead to growth of a broad range of Ge1−ySny alloys and compounds directly on Si substrates. The direct bandgap (E0) and optical transitions E0+Δ0, E1, E1+Δ1, E0′, and E2 of Ge1−ySny exhibit strong nonlinearities in the compositional dependence, and their bowing parameters correlate with those in Ge1 −xSix, suggesting a scaling behavior for the electronic properties. The Ge1−ySny films can be used as “virtual substrates” for the subsequent growth of Ge1−x−ySixSny ternaries. These are created for the first time and exhibit unprecedented thermal stability, superior crystallinity and unique optical and strain properties such as adjustable bandgaps, and controllable strain states (compressive, relaxed, and tensile). The synthesis of Ge1−x−ySixSny makes it possible to decouple strain and bandgap and adds new levels of flexibility to the design of group IV devices. The Ge-Si-Sn system also represents a new class of “designer” templates for the monolithic integration of III-V and II-VI semiconductors with Si electronics.