The generation of crystal defects in Ge-on-insulator (GOI) layers in the Ge-condensation process-Reference-Cited by-同舟云学术

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The generation of crystal defects in Ge-on-insulator (GOI) layers in the Ge-condensation process

Published:2006-11-30 Issue:1 Volume:22 Page:S103-S106
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Nakaharai S,Tezuka T,Hirashita N,Toyoda E,Moriyama Y,Sugiyama N,Takagi S

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. Characterization of 7-nm-thick strained Ge-on-insulator layer fabricated by Ge-condensation technique

2. A Novel Fabrication Technique of Ultrathin and Relaxed SiGe Buffer Layers with High Ge Fraction for Sub-100 nm Strained Silicon-on-Insulator MOSFETs

3. The diffusion of silicon in germanium

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1. Ge-on-insulator fabrication based on Ge-on-nothing technology;Japanese Journal of Applied Physics;2024-04-01

2. Engineering epitaxy and condensation: Fabrication of Ge nanolayers, mechanism and applications;Applied Surface Science;2023-09

3. Local defect-free elastic strain relaxation of Si1-xGex embedded into SiO2;Applied Surface Science;2022-07

4. Crystal quality of SiGe films fabricated by the condensation technique and characterized by medium energy ion scattering;Semiconductor Science and Technology;2019-05-08

5. Intensifying internal electric field for efficient charge separation in different dimensions photocatalysts via in-situ crystallization;Materials Letters;2018-08

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