Necessity of Ga prelayers in GaAs/Ge growth using gas‐source molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.111049
Reference22 articles.
1. Gallium arsenide and other compound semiconductors on silicon
2. Solid‐phase heteroepitaxy of Ge on 〈100〉Si
3. The heteroepitaxy of Ge on Si: A comparison of chemical vapor and vacuum deposited layers
4. Growth and characterization of GaAs/Ge epilayers grown on Si substrates by molecular beam epitaxy
5. Effect ofin situThermal Annealing on Crystalline Quality of Ge Layers Grown by Molecular Beam Epitaxy on Si (100)
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2. In situ observation of low temperature growth of Ge on Si(1 1 1) by reflection high energy electron diffraction;Applied Surface Science;2016-05
3. InAs/GaAs Quantum-Dot Lasers Monolithically Grown on Si, Ge, and Ge-on-Si Substrates;IEEE Journal of Selected Topics in Quantum Electronics;2013-07
4. Influence of growth temperatures on the quality of InGaAs/GaAs quantum well structure grown on Ge substrate by molecular beam epitaxy;Journal of Semiconductors;2011-04
5. High-quality III–V semiconductor MBE growth on Ge/Si virtual substrates for metal-oxide-semiconductor device fabrication;Journal of Crystal Growth;2009-03
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