High-quality III–V semiconductor MBE growth on Ge/Si virtual substrates for metal-oxide-semiconductor device fabrication
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference32 articles.
1. Polar-on-nonpolar epitaxy
2. Controlling threading dislocation densities in Ge on Si using graded SiGe layers and chemical-mechanical polishing
3. High-quality Ge epilayers on Si with low threading-dislocation densities
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5. Reduced pressure-chemical vapor deposition of intrinsic and doped Ge layers on Si(001) for microelectronics and optoelectronics purposes
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