GaAs structures with electron mobility of 5×106cm2/V s
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.97710
Reference13 articles.
1. Electron mobilities in modulation-doped GaAs-(AlGa)As heterostructures
2. Low temperature two-dimensional mobility of a GaAs heterolayer
3. Two‐dimensional electron gas structures with mobilities in excess of 3×106cm2 V−1 s−1
4. Complex free‐carrier profile synthesis by ’’atomic‐plane’’ doping of MBE GaAs
5. Si Atomic-Planar-Doping in GaAs Made by Molecular Beam Epitaxy
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