Effects of applied magnetic field and pressure on the diamagnetic susceptibility and binding energy of donor impurity in GaAs quantum dot considering the non-parabolicity model’s influence-Reference-Cited by-同舟云学术

Effects of applied magnetic field and pressure on the diamagnetic susceptibility and binding energy of donor impurity in GaAs quantum dot considering the non-parabolicity model’s influence

Published:2022-11-13 Issue:3 Volume:103 Page:286-303
ISSN:1478-6435
Container-title:Philosophical Magazine
language:en
Short-container-title:Philosophical Magazine

Author:

Maouhoubi Ibrahim¹,En-nadir Redouane¹^ORCID,El bekkari Kamal¹^ORCID,Zorkani Izeddine¹,Ouazzani Tayebi Hassani Abdallah¹,Jorio Anouar¹

Affiliation:

1. LPS, Department of physics, Sidi Mohamed Ben Abdellah University Fez, Morocco

Publisher

Informa UK Limited

Subject

Condensed Matter Physics

Link

https://www.tandfonline.com/doi/pdf/10.1080/14786435.2022.2141469

Reference47 articles.

1. Electronic structure of small GaAs clusters

2. Band gap of GaAs1−xBix, 0

3. A critical review of the experimental valence charge density of GaAs

4. GaAs structures with electron mobility of 5×106cm2/V s

5. Dissociation pressures of GaAs, GaP and InP and the nature of III–V melts

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