High-electron-mobility Si/SiGe heterostructures: influence of the relaxed SiGe buffer layer-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

High-electron-mobility Si/SiGe heterostructures: influence of the relaxed SiGe buffer layer

Published:1992-02-01 Issue:2 Volume:7 Page:260-266
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Schaffler F,Tobben D,Herzog H -J,Abstreiter G,Hollander B

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/7/i=2/a=014/pdf

Reference20 articles.

1. Strain-Induced Two-Dimensional Electron Gas in Selectively DopedSi/SixGe1−xSuperlattices

2. Theoretical calculations of heterojunction discontinuities in the Si/Ge system

3. Growth and properties of Si/SiGe superlattices

Cited by 287 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Deformation effect on graphene quantum dot/graphane and silicene quantum dot/silicane array;Journal of Physics and Chemistry of Solids;2024-10

2. Local defect-free elastic strain relaxation of Si1-xGex embedded into SiO2;Applied Surface Science;2022-07

3. Atomic-scale insights on the formation of ordered arrays of edge dislocations in Ge/Si(001) films via molecular dynamics simulations;Scientific Reports;2022-02-25

4. Research progress of silicon and germanium quantum computing materials;Acta Physica Sinica;2021

5. p-Diamond, Si, GaN, and InGaAs TeraFETs;IEEE Transactions on Electron Devices;2020-11

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3