Theoretical calculations of heterojunction discontinuities in the Si/Ge system
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.34.5621/fulltext
Reference60 articles.
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4. Modulation doping in GexSi1−x/Si strained layer heterostructures
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