Investigation of degradation behavior under negative bias temperature stress in Si/Si0.8Ge0.2 metal-oxide-semiconductor capacitors-Reference-Cited by-同舟云学术

Investigation of degradation behavior under negative bias temperature stress in Si/Si0.8Ge0.2 metal-oxide-semiconductor capacitors

Published:2021-09-02 Issue:47 Volume:54 Page:475103
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Chang Yen-Cheng,Lin Chien-Yu,Chang Ting-Chang^ORCID,Lin Yun-Hsuan,Chen Kuan-Hsu,Jin Fu-Yuan,Lin Yu-Shan,Ciou Fong-Min,Chang Kai-Chun,Hung Wei-Chun,Kuo Ting-Tzu,Yeh Chien-Hung

Funder

Ministry of Science and Technology, Taiwan

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1088/1361-6463/ac1bd2/pdf

Reference32 articles.

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3. SiGe channel p-MOSFETs scaling-down;Andrieu,2003

4. Enhanced hole transport in short-channel strained-SiGe p-MOSFETs;Gomez;IEEE Trans. Electron Devices,2009

5. High-mobility strained SiGe-on-insulator pMOSFETs with Ge-rich surface channels fabricated by local condensation technique;Tezuka;IEEE Electron Device Lett.,2005

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