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Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors

  • Published:2005-01 Issue:1 Volume:97 Page:011101
  • ISSN:0021-8979
  • Container-title:Journal of Applied Physics
  • language:en
  • Short-container-title:Journal of Applied Physics

Author:

Lee Minjoo L.,Fitzgerald Eugene A.,Bulsara Mayank T.,Currie Matthew T.,Lochtefeld Anthony

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Reference166 articles.

1. Symposium on VLSI Technology Digest of Technical Papers;Antoniadis D. A.,2002

2. Technical Digest-International Electron Devices Meeting;Hoyt J. L.,2002

3. Technical Digest-International Electron Devices Meeting;Thompson S.,2002

4. Modulation doping in GexSi1−x/Si strained layer heterostructures

5. Band alignments of coherently strained GexSi1−x/Si heterostructures on 〈001〉 GeySi1−ysubstrates

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