Tc and resistivity variation induced by external bending strain in flexible film of strain-sensitive (La,Sr)2CuO4
Author:
Affiliation:
1. Nagoya University
2. Kyushu Institute of Technology
Funder
Japan Society for the Promotion of Science
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevMaterials.8.094802/fulltext
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1. Comparing bulk-Si FinFET and gate-all-around FETs for the 5 nm technology node
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5. Theory, technology and applications of piezoresistive sensors: A review
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