Very high mobility two‐dimensional hole gas in Si/GexSi1−x/Ge structures grown by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.110547
Reference8 articles.
1. Molecular Beam Epitaxial Growth of Very High Mobility Two-Dimensional Electron Gases in Si/GeSi Heterostructures
2. High-electron-mobility Si/SiGe heterostructures: influence of the relaxed SiGe buffer layer
3. Fabrication of high mobility two‐dimensional electron and hole gases in GeSi/Si
4. Relaxed GexSi1−x structures for III–V integration with Si and high mobility two-dimensional electron gases in Si
5. A solution to boron contamination at the substrate/epilayer interface of silicon grown by molecular beam epitaxy
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