A solution to boron contamination at the substrate/epilayer interface of silicon grown by molecular beam epitaxy-Reference-Cited by-同舟云学术

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A solution to boron contamination at the substrate/epilayer interface of silicon grown by molecular beam epitaxy

Published:1986-07 Issue:4 Volume:4 Page:1905-1907
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Kubiak R. A. A.,Leong W. Y.,Dowsett M. G.,McPhail D. S.,Houghton R.,Parker E. H. C.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.573745

Cited by 34 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Hole generation associated with intrinsic defects in SOI-based SiGe thin films formed by solid-source molecular beam epitaxy;Journal of Applied Physics;2017-11-14

2. Unintentional boron contamination of MBE-grown GaInP/AlGaInP quantum wells;Journal of Crystal Growth;2015-09

3. Study on interfacial dislocations of Si substrate/epitaxial layer by self-interstitial decoration technique;Applied Physics Letters;2003-08-04

4. Surface preparation of Si substrates for epitaxial growth;Surface Science;1998-05

5. Near-surface profiling of semiconductor materials using neutron depth profiling;Semiconductor Science and Technology;1995-11-01

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