Study on interfacial dislocations of Si substrate/epitaxial layer by self-interstitial decoration technique
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1596385
Reference16 articles.
1. Semiconductor molecular‐beam epitaxy at low temperatures
2. Dependence of residual damage on temperature during Ar+sputter cleaning of silicon
3. Reduction of oxides on silicon by heating in a gallium molecular beam at 800 °Ca)
4. Preparation of atomically clean silicon surfaces by pulsed laser irradiation
5. The characterization of indium desorbed Si surfaces for low temperature surface cleaning in Si molecular beam epitaxy
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1. Effect of substrate growth temperatures on H diffusion in hydrogenated Si∕Si homoepitaxial structures grown by molecular beam epitaxy;Journal of Applied Physics;2006-06-15
2. Ion-cut of Si facilitated by interfacial defects of Si substrate/epitaxial layer grown by molecular-beam epitaxy;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2006-01
3. Using point-defect engineering to increase stability of highly doped ultrashallow junctions formed by molecular-beam-epitaxy growth;Applied Physics Letters;2003-10-06
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