Dependence of residual damage on temperature during Ar+sputter cleaning of silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.323706
Reference18 articles.
1. Application of the Ion Bombardment Cleaning Method to Titanium, Germanium, Silicon, and Nickel as Determined by Low‐Energy Electron Diffraction
2. Surface spectroscopy of Schottky-barrier formation on Si(111) 7 × 7: Photoemission studies of filled surface states and band bending
3. Ion-Neutralization Spectroscopy of Copper and Nickel
4. Preparation and Regeneration of Clean Germanium Surfaces
5. Secondary defects in phosphorus‐implanted silicon
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