GaAs metal–oxide–semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition-Reference-Cited by-同舟云学术

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GaAs metal–oxide–semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition

Published:2003-07-07 Issue:1 Volume:83 Page:180-182
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Ye P. D.,Wilk G. D.,Yang B.,Kwo J.,Chu S. N. G.,Nakahara S.,Gossmann H.-J. L.,Mannaerts J. P.,Hong M.,Ng K. K.,Bude J.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1590743

Reference18 articles.

1. Status of the GaAs metal—oxide—semiconductor technology

2. Unpinned GaAs MOS capacitors and transistors

3. High-power-density GaAs MISFETs with a low-temperature-grown epitaxial layer as the insulator

4. Sulfide treated GaAs MISFET's with gate insulator of photo-CVD grown P/sub 3/N/sub 5/ film

5. AlxGa1−xAs–GaAs metal–oxide semiconductor field effect transistors formed by lateral water vapor oxidation of AlAs

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