Achieving a low interfacial density of states in atomic layer deposited Al2O3 on In0.53Ga0.47As
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3027476
Reference22 articles.
1. Ga2O3(Gd2O3)/InGaAs enhancement-mode n-channel MOSFETs
2. High-Performance Inversion-Type Enhancement-Mode InGaAs MOSFET With Maximum Drain Current Exceeding 1 A/mm
3. High-performance self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistor with Al2O3∕Ga2O3(Gd2O3) as gate dielectrics
4. 1nm equivalent oxide thickness in Ga2O3(Gd2O3)∕In0.2Ga0.8As metal-oxide-semiconductor capacitors
5. Novel Ga2O3 (Ga2O3) passivation techniques to produce low Dit oxide-GaAs interfaces
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