Effects of Ge concentration on SiGe oxidation behavior
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.105502
Reference18 articles.
1. GexSi1−x/Si strained‐layer superlattice grown by molecular beam epitaxy
2. The n-channel SiGe/Si modulation-doped field-effect transistor
3. Heterojunction bipolar transistors using Si-Ge alloys
4. Resonant tunneling through a Si/GexSi1−x/Si heterostructure on a GeSi buffer layer
5. Hole transport through minibands of a symmetrically strained GexSi1−x/Si superlattice
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