Resonant tunneling through a Si/GexSi1−x/Si heterostructure on a GeSi buffer layer
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.100148
Reference10 articles.
1. The n-channel SiGe/Si modulation-doped field-effect transistor
2. GexSi1−xstrained‐layer heterostructure bipolar transistors
3. Si/Ge0.3Si0.7/Si heterojunction bipolar transistor made with Si molecular beam epitaxy
4. GexSi1−xstrained‐layer superlattice waveguide photodetectors operating near 1.3 μm
5. Structurally induced optical transitions in Ge-Si superlattices
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