GexSi1−xstrained‐layer heterostructure bipolar transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.99220
Reference10 articles.
1. Avalanche gain in GexSi1-x/Si infrared waveguide detectors
2. GexSi1−xstrained‐layer superlattice waveguide photodetectors operating near 1.3 μm
3. Ge0.6Si0.4rib waveguide avalanche photodetectors for 1.3 μm operation
4. Enhancement- and depletion-mode p-channel GexSi1-xmodulation-doped FET's
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