GexSi1−xstrained‐layer superlattice waveguide photodetectors operating near 1.3 μm
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.96624
Reference6 articles.
1. GexSi1−x/Si strained‐layer superlattice grown by molecular beam epitaxy
2. Modulation doping in GexSi1−x/Si strained layer heterostructures
3. New infrared detector on a silicon chip
4. Indirect band gap of coherently strainedGexSi1−xbulk alloys on〈001〉silicon substrates
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