Indirect band gap of coherently strainedGexSi1−xbulk alloys on〈001〉silicon substrates
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.32.1405/fulltext
Reference16 articles.
1. GexSi1−x/Si strained‐layer superlattice grown by molecular beam epitaxy
2. Modulation doping in GexSi1−x/Si strained layer heterostructures
3. New infrared detector on a silicon chip
4. New device applications of bandedge discontinuities in multilayer heterojunction structures
5. Raman scattering from GexSi1−x/Si strained‐layer superlattices
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