Structurally induced optical transitions in Ge-Si superlattices
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.58.729/fulltext
Reference16 articles.
1. Recent developments in silicon molecular beam epitaxy
2. Silicon molecular beam epitaxy
3. Ge‐Si layered structures: Artificial crystals and complex cell ordered superlattices
4. Indirect band gap of coherently strainedGexSi1−xbulk alloys on〈001〉silicon substrates
5. Strain-Induced Two-Dimensional Electron Gas in Selectively DopedSi/SixGe1−xSuperlattices
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