Demonstration of Monolayer Doping of Five-Stacked Ge Nanosheet Field-Effect Transistors

Author:

Chu Chun-Lin1,Luo Guang-Li1ORCID,Chou Dean2,Hsu Shu-Han34ORCID

Affiliation:

1. Taiwan Semiconductor Research Institute, National Applied Research Laboratories, Hsinchu 30076, Taiwan

2. Department of Biomedical Engineering, National Cheng Kung University, 1 University Road, Tainan 701, Taiwan

3. Functional Advanced Materials Engineering Research Center (FAME), Sirindhorn International Institute of Technology (SIIT), Thammasat University, Pathum Thani 12120, Thailand

4. School of Bio-Chemical Engineering and Technology, Sirindhorn International Institute of Technology (SIIT), Thammasat University, Pathum Thani 12120, Thailand

Funder

National Taipei University of Technology

Thammasat University

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Fluoride monolayer doping in GaN/AlGaN/GaN semiconductor;MRS Advances;2023-05-09

2. Boron Doping in Next-Generation Materials for Semiconductor Device;Characteristics and Applications of Boron;2022-10-26

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