1. Fundamentals of Modern VLSI Devices;Taur,1998
2. FinFET-a self-aligned double-gate MOSFET scalable to 20 nm
3. S.H. Tang, L. Chang, N. Lindert, Y.-K. Choi, W.-C. Lee, X. Huang, et al., FinFET – a quasi-planar double-gate MOSFET, in: ISSCC 2001 Digest of Technical Papers, 2001, pp. 118–119.
4. Y. Bin, C. Leland, S. Ahmed, W. Haihong, S. Bell, Y. Chih-Yuh, et al., FinFET scaling to 10nm gate length, in: IEDM 2002 Digest of Technical Papers, 2002, pp. 251–254.
5. Body-tied triple-gate NMOSFET fabrication using bulk Si wafer