1. Kedzierski J, Nowak E, Kanarsky T, Zhang Y, Boyd D, Carruthers R, et al. Metal-gate FinFET and fully-depleted SOI devices using total gate silicidation. In: IEEE International Electron Devices Meeting (IEDM), Technical Digest December; 2002. p. 247–50
2. Yu B, Chang L, Ahmed S, Wang H, Bell S, Yang C-Y, et al. 25nm CMOS Omega FETs. In: IEEE International Electron Devices Meeting (IEDM), Technical Digest; December 2002. p. 251–4
3. Silicon-on-insulator technology: materials to VLSI;Jean-Pierre,1991
4. Yang F-L, Chen HY, Chen F-C, Huang C-C, Chang C-Y, Chiu H-K. FinFET process refinements for improved mobility and gate work function engineering. In: IEEE International Electron Devices Meeting (IEDM), Technical Digest; December 2002. p. 255–8
5. Park T, Choi S, Lee DH, Yoo JR, Lee BC, Kim JY, Lee CG, et al. Fabrication of body-tied FinFETS (Omega MOSFETs) using bulk si wafers. In: JSA P and IEEE Symposium on VLSI Technology, Kyoto, Japan, Technical Digest; June 2003. p. 135–6