Technological development of high-k dielectric FinFETs for liquid environment-Reference-Cited by-同舟云学术

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Technological development of high-k dielectric FinFETs for liquid environment

Published:2014-08 Issue: Volume:98 Page:81-87
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Rigante S.,Scarbolo P.,Bouvet D.,Wipf M.,Bedner K.,Ionescu A.M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. Nanowire nanosensors;Patolsky;Mater Today,2005

2. Real-time, label-free detection of biological entities using nanowire-based FETs;Curreli;IEEE Trans Nanotechnol,2008

3. Thirty years of ISFETOLOGY-What happened in the past 30year and what may happen in the next 30years;Bergveld;Sens Actuators B,2003

4. Silicon nanoribbons for electrical detection of biomolecules;Elfstrom;Nano Lett,2008

5. Semiconducting nanowire field-effect transistor biomolecular sensors;Stern;IEEE Trans Electron Dev,2008

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Performance optimization of single-layer and double-layer high-k gate nanoscale ion-sensitive field-effect transistors;Sensors and Actuators B: Chemical;2018-04

2. Sensing with Advanced Computing Technology: Fin Field-Effect Transistors with High-k Gate Stack on Bulk Silicon;ACS Nano;2015-04-24

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