Sensing with Advanced Computing Technology: Fin Field-Effect Transistors with High-k Gate Stack on Bulk Silicon-Reference-Cited by-同舟云学术

Sensing with Advanced Computing Technology: Fin Field-Effect Transistors with High-k Gate Stack on Bulk Silicon

Published:2015-04-24 Issue:5 Volume:9 Page:4872-4881
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Rigante Sara¹,Scarbolo Paolo²,Wipf Mathias³,Stoop Ralph L.³,Bedner Kristine⁴,Buitrago Elizabeth¹,Bazigos Antonios¹,Bouvet Didier¹,Calame Michel³,Schönenberger Christian³,Ionescu Adrian M.¹

Affiliation:

1. Nanoelectronic Devices Laboratory, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland

2. Department of Electrical, Management and Mechanical Engineering, University of Udine, 33100 Udine, Italy

3. Department of Physics, University of Basel, 4003 Basel, Switzerland

4. Laboratory for Micro- and Nanotechnology, Paul Scherrer Institut, 5232 Villigen, Switzerland

Funder

Schweizerische Universitätskonferenz

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/nn5064216

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