Modulation of TiSiN effective work function using high-pressure postmetallization annealing in dilute oxygen ambient-Reference-Cited by-同舟云学术

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Modulation of TiSiN effective work function using high-pressure postmetallization annealing in dilute oxygen ambient

Published:2008-06-30 Issue:26 Volume:92 Page:263505
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lee Joonmyoung,Park Hokyung,Choi Hyejung,Hasan Musarrat,Jo Minseok,Chang Man,Lee Byoung Hun,Park Chang Seo,Kang Chang Yong,Hwang Hyunsang

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2953192

Reference17 articles.

1. Dopant penetration studies through Hf silicate

2. Proceedings of VLSI-TSA;Wen H.-C.,2007

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Gate-last TiN/HfO2 band edge effective work functions using low-temperature anneals and selective cladding to control interface composition;Applied Physics Letters;2012-04-09

2. (Invited) Band-Edge Effective Work Functions by Controlling HfO2/TiN Interfacial Composition for Gate-Last CMOS;ECS Transactions;2011-04-25

3. Interfacial oxygen and nitrogen induced dipole formation and vacancy passivation for increased effective work functions in TiN/HfO2 gate stacks;Applied Physics Letters;2010-03-08

4. Reliability Characteristics of La-doped High-k/Metal Gate nMOSFETs;JSTS:Journal of Semiconductor Technology and Science;2009-09-30

5. Reliability of La-Doped Hf-Based Dielectrics nMOSFETs;IEEE Transactions on Device and Materials Reliability;2009-06

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