Mechanisms of TiN Effective Workfunction Tuning at Interfaces with HfO2 and SiO2-Reference-Cited by-同舟云学术

Mechanisms of TiN Effective Workfunction Tuning at Interfaces with HfO2 and SiO2

Published:2020-06-16 Issue:28 Volume:124 Page:15547-15557
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Filatova Elena O.¹^ORCID,Konashuk Aleksei S.¹^ORCID,Sakhonenkov Sergei S.¹,Gaisin Aidar U.¹,Kolomiiets Nadiia M.²,Afanas’ev Valeri V.²^ORCID,Dekkers Harold F. W.³

Affiliation:

1. Institute of Physics, St. Petersburg State University, Ulyanovskaya Str. 1, Peterhof, St. Petersburg 198504, Russia

2. Semiconductor Physics Laboratory, University of Leuven, Celestijnenlaan 200D, Leuven 3001, Belgium

3. imec, Kapeldreef 75, Leuven 3001, Belgium

Funder

Russian Science Foundation

Fonds Wetenschappelijk Onderzoek ? Vlaanderen

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.0c03605

Reference61 articles.

1. Theory of Metal Surfaces: Charge Density and Surface Energy

2. Grain-Orientation Induced Work Function Variation in Nanoscale Metal-Gate Transistors—Part II: Implications for Process, Device, and Circuit Design

3. Properties of ALD TaxNy films as a barrier to aluminum in work function metal stacks

4. Influence of Al/TiN/SiO2 structure on MOS capacitor, Schottky diode, and fin field effect transistors devices

5. Internal Photoemission Metrology of Inhomogeneous Interface Barriers

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