Funder
Russian Science Foundation
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference75 articles.
1. V. V. Afanas’ev, A. Stesmans, L. Pantisano, S. Cimino, C. Adelmann, L. Goux, Y.Y. Chen, J.A. Kittl, D. Wouters, M. Jurczak, TiNx/HfO2 interface dipole induced by oxygen scavenging, Appl Phys Lett. 98 (2011) 132901. 10.1063/1.3570647.
2. Metallization-Induced Oxygen Deficiency of γ-Al2O3 Layers;Filatova;J. Phys. Chem. C,2016
3. Towards barrier height modulation in HfO2/TiN by oxygen scavenging - Dielectric defects or metal induced gap states?;Pantisano;Microelectron Eng.,2011
4. Effective work function modulation by controlled dielectric monolayer deposition;Pantisano;Appl Phys Lett.,2006
5. Modulation of electron barriers between TiNx and oxide insulators (SiO2, Al2O3) using Ti interlayer;De Stefano;Phys. Status Solidi A,2014
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