Internal Photoemission Metrology of Inhomogeneous Interface Barriers-Reference-Cited by-同舟云学术

Internal Photoemission Metrology of Inhomogeneous Interface Barriers

Published:2017-12-07 Issue:6 Volume:215 Page:1700865
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Afanas'ev Valery¹^ORCID,Kolomiiets Nadiia¹^ORCID,Houssa Michel¹^ORCID,Stesmans Andre¹

Affiliation:

1. Laboratory of Semiconductor Physics Department of Physics and Astronomy University of Leuven; Celestijnenlaan 200D, Box 2417 B-3001 Leuven Belgium

Funder

Fonds Wetenschappelijk Onderzoek - Vlaanderen

Internal University Fund

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference62 articles.

1. https://www.semiconductors.org/main/2015_international_technology_roadmap_for_semiconductors_itrs/

2. Effect of Work Function Difference Between Top and Bottom Electrodes on the Resistive Switching Properties of SiN Films

3. Impact of work function on the resistive switching characteristics of M/ZnO/CeO2/Pt devices

4. Effective work functions for ionic and electronic emissions from mono- and polycrystalline surfaces

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