Study of Contact Resistance Components in Short-Channel Indium-Gallium-Zinc-Oxide Transistor
Author:
Affiliation:
1. Department of Physics and Astronomy, Katholieke Universiteit Leuven, Leuven, Belgium
2. IMEC, Leuven, Belgium
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/10382412/10327698.pdf?arnumber=10327698
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1. Material characteristics and applications of transparent amorphous oxide semiconductors
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3. Compensating Pixel Circuit Driving AMOLED Display With a-IGZO TFTs
4. Capacitor-less, Long-Retention (>400s) DRAM Cell Paving the Way towards Low-Power and High-Density Monolithic 3D DRAM
5. First Demonstration of Dual-Gate IGZO 2T0C DRAM with Novel Read Operation, One Bit Line in Single Cell, ION=1500 μA/μm@VDS=1V and Retention Time>300s
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