Discovering the Impact of Cooling Scheme During Annealing: A New Knob for Achieving Thermally Stable IGZO FETs-Reference-Cited by-同舟云学术

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Discovering the Impact of Cooling Scheme During Annealing: A New Knob for Achieving Thermally Stable IGZO FETs

Published:2024-09 Issue:9 Volume:71 Page:5425-5431
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Kong Qiwen¹^ORCID,Liu Long¹,Han Kaizhen¹^ORCID,Sun Chen¹^ORCID,Jiao Leming¹^ORCID,Zhou Zuopu¹^ORCID,Zheng Zijie¹^ORCID,Liu Gan¹^ORCID,Xu Haiwen¹^ORCID,Zhang Jishen¹,Chen Yue¹,Gong Xiao¹^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, National University of Singapore, Cluny Road, Singapore

Funder

Singapore Ministry of Education

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx8/16/10645717/10622057.pdf?arnumber=10622057

Reference38 articles.

1. Monolithic Integration of Oxide Semiconductor FET and Ferroelectric Capacitor Enabled by Sn-Doped InGaZnO for 3-D Embedded RAM Application

2. Monolithic 3D Integration of High Endurance Multi-Bit Ferroelectric FET for Accelerating Compute-In-Memory

3. Indium Zinc Oxide Nanosheet Transistor With 2 nm Channel Thickness for Monolithic Three-Dimensional Integrated Circuit

4. Thickness-Engineered Extremely-thin Channel High Performance ITO TFTs with Raised S/D Architecture: Record-Low R_SD, Highest Moblity (Sub-4 nm T_CH Regime), and High V_TH Tunability

5. Robustness of Passivated ALD Zinc Tin Oxide TFTs to Aging and Bias Stress

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