Robustness of Passivated ALD Zinc Tin Oxide TFTs to Aging and Bias Stress-Reference-Cited by-同舟云学术

Robustness of Passivated ALD Zinc Tin Oxide TFTs to Aging and Bias Stress

Published:2022-12 Issue:12 Volume:69 Page:6776-6782
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Allemang Christopher R.¹^ORCID,Cho Tae H.²^ORCID,Dasgupta Neil P.³^ORCID,Peterson Rebecca L.⁴^ORCID

Affiliation:

1. Electrical Engineering and Computer Science Department, University of Michigan, Ann Arbor, MI, USA

2. Department of Mechanical Engineering, University of Michigan, Ann Arbor, MI, USA

3. Department of Mechanical Engineering and the Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI, USA

4. Department of Electrical Engineering and Computer Science and the Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI, USA

Funder

National Science Foundation

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

https://ieeexplore.ieee.org/ielam/16/9967813/9936594-aam.pdf

Reference61 articles.

1. Stability and high-frequency operation of amorphous In–Ga–Zn–O thin-film transistors with various passivation layers

2. Passivation of Amorphous Oxide Semiconductors Utilizing a Zinc–Tin–Silicon–Oxide Barrier Layer

3. Influence of Channel Layer Thickness on the Electrical Performances of Inkjet-Printed In-Ga-Zn Oxide Thin-Film Transistors

4. Trap-limited and percolation conduction mechanisms in amorphous oxide semiconductor thin film transistors

5. Extraction of SnO Subbandgap Defect Density by Numerical Modeling of p-Type TFTs

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