First Demonstration of Dual-Gate IGZO 2T0C DRAM with Novel Read Operation, One Bit Line in Single Cell, I<sub>ON</sub>=1500 μA/μm@V<sub>DS</sub>=1V and Retention Time>300s-Reference-Cited by-同舟云学术

First Demonstration of Dual-Gate IGZO 2T0C DRAM with Novel Read Operation, One Bit Line in Single Cell, I_ON=1500 μA/μm@V_DS=1V and Retention Time>300s

Published:2022-12-03 Issue: Volume: Page:
ISSN:
Container-title:2022 International Electron Devices Meeting (IEDM)
language:
Short-container-title:

Author:

Lu Wendong¹,Zhu Zhengyong²,Chen Kaifei¹,Liu Menggan¹,Kang Bok-Moon²,Duan Xinlv¹,Niu Jiebin¹,Liao Fuxi¹,Dan Wang²,Wu Xie-Shuai²,Son Joohwan²,Xiao De-Yuan³,Wang Gui-Lei²,Yoo Abraham³,Cao Kan-Yu³,Geng Di¹,Lu Nianduan¹,Yang Guanhua¹,Zhao Chao²,Li Ling¹,Liu Ming¹

Affiliation:

1. Institute of Microelectronics, Chinese Academy of Sciences,Key Laboratory of Microelectronics Devices and Integrated Technology,Beijing,China

2. Beijing Superstring Academy of Memory Technology,Beijing,China,100176

3. ChangXin Memory Technologies, Inc,Hefei,China,230071

Funder

National Natural Science Foundation of China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10019319/10019320/10019488.pdf?arnumber=10019488

Reference7 articles.

Cited by 25 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of Source/Drain Electrode Materials on the Electrical Performance and Stability of Amorphous Indium-Tin-Zinc-Oxide FETs;IEEE Transactions on Electron Devices;2024-09

2. Revisiting row hammer: A deep dive into understanding and resolving the issue;Microelectronics Reliability;2024-09

3. Area- and Power-Efficient Compute-in-Memory Macro Based on Oxide Semiconductor 2T0C eDRAM With Cell-System Co-Optimization;IEEE Transactions on Electron Devices;2024-09

4. CMOS Logic and Capacitorless DRAM by Stacked Oxide Semiconductor and Poly-Si Transistors for Monolithic 3-D Integration;IEEE Transactions on Electron Devices;2024-08

5. ReadMagin Enhanced PCSA for AOSFET 2TOC Gain Cell Memory;2024 9th International Conference on Electronic Technology and Information Science (ICETIS);2024-05-17