ReadMagin Enhanced PCSA for AOSFET 2TOC Gain Cell Memory
Author:
Affiliation:
1. Joint Institute of Microelectronics, Jinjiang Science and Education Park, Fuzhou University Fujian,FZU-Jinjiang,Jinjiang,China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx8/10592861/10593657/10593746.pdf?arnumber=10593746
Reference8 articles.
1. Tailoring IGZO-TFT architecture for capacitorless DRAM, demonstrating > 103s retention, >1011 cycles endurance and Lg scalability down to 14nm
2. Recent progress in InGaZnO FETs for high-density 2T0C DRAM applications
3. Novel Vertical Channel-All-Around (CAA) In-Ga-Zn-O FET for 2T0C-DRAM With High Density Beyond 4F2 by Monolithic Stacking
4. First Demonstration of Dual-Gate IGZO 2T0C DRAM with Novel Read Operation, One Bit Line in Single Cell, ION=1500 μA/μm@VDS=1V and Retention Time>300s
5. Capacitorless DRAM Cells Based on High-Performance Indium-Tin-Oxide Transistors With Record Data Retention and Reduced Write Latency
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