Tailoring IGZO-TFT architecture for capacitorless DRAM, demonstrating > 103s retention, >1011 cycles endurance and Lg scalability down to 14nm-Reference-Cited by-同舟云学术

Tailoring IGZO-TFT architecture for capacitorless DRAM, demonstrating > 10³s retention, >10¹¹ cycles endurance and L_g scalability down to 14nm

Published:2021-12-11 Issue: Volume: Page:
ISSN:
Container-title:2021 IEEE International Electron Devices Meeting (IEDM)
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Author:

Belmonte A.¹,Oh H.¹,Subhechha S.¹,Rassoul N.¹,Hody H.¹,Dekkers H.¹,Delhougne R.¹,Ricotti L.¹,Banerjee K.¹,Chasin A.¹,van Setten M. J.¹,Puliyalil H.¹,Pak M.¹,Teugels L.¹,Tsvetanova D.¹,Vandersmissen K.¹,Kundu S.¹,Heijlen J.¹,Batuk D.¹,Geypen J.¹,Goux L.¹,Kar G. S.¹

Affiliation:

1. imec,Leuven,Belgium,B-3001

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9720433/9720494/09720596.pdf?arnumber=9720596

Reference7 articles.

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