Novel Vertical Channel-All-Around (CAA) In-Ga-Zn-O FET for 2T0C-DRAM With High Density Beyond 4F<sup>2</sup> by Monolithic Stacking-Reference-Cited by-同舟云学术

Novel Vertical Channel-All-Around (CAA) In-Ga-Zn-O FET for 2T0C-DRAM With High Density Beyond 4F² by Monolithic Stacking

Published:2022-04 Issue:4 Volume:69 Page:2196-2202
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Duan Xinlv¹^ORCID,Huang Kailiang²,Feng Junxiao²,Niu Jiebin¹,Qin Haibo²,Yin Shihui²,Jiao Guangfan²,Leonelli Daniele²,Zhao Xiaoxuan²,Wang Zhaogui²,Jing Weiliang²,Wang Zhengbo²,Wu Ying²,Xu Jeffrey²,Chen Qian¹,Chuai Xichen¹^ORCID,Lu Congyan¹,Wang Wenwu¹,Yang Guanhua¹,Geng Di¹^ORCID,Li Ling¹^ORCID,Liu Ming¹^ORCID

Affiliation:

1. Key Laboratory of Microelectronics Device and Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing, China

2. Huawei Technologies Company, Ltd., Shenzhen, China

Funder

National Natural Science Foundation of China

Strategic Priority Research Program of Chinese Academy of Sciences

National Key Research and Development Program of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

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