Impact of hydrogen diffusion on electrical characteristics of IGZO TFTs passivated by SiO2 or Al2O3
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Publisher
IEEE
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http://xplorestaging.ieee.org/ielx7/6863140/6867099/06867154.pdf?arnumber=6867154
Cited by 13 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Sputtered AlOx interlayer for improving performance of a-InGaZnO TFTs: A study on hydrogen diffusion mitigation and electron modulation;Applied Physics Letters;2024-08-05
2. Device feasibility and performance improvement methodologies for thin film transistors using In-Ga-Sn-O channels prepared by atomic-layer deposition;Journal of Vacuum Science & Technology B;2022-07
3. Synergic strategies of composition-modified bilayer channel configuration and ozone-processed gate stacks for atomic-layer deposited In-Ga-Zn-O thin-film transistors;Journal of Alloys and Compounds;2022-06
4. Elevated‐Metal Metal‐Oxide Thin‐Film Transistors: A Back‐Gate Transistor Architecture with Annealing‐Induced Source/Drain Regions;Amorphous Oxide Semiconductors;2022-05-20
5. Novel Vertical Channel-All-Around (CAA) In-Ga-Zn-O FET for 2T0C-DRAM With High Density Beyond 4F2 by Monolithic Stacking;IEEE Transactions on Electron Devices;2022-04
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