Effects of Deposition Temperature on the Device Characteristics of Oxide Thin-Film Transistors Using In–Ga–Zn–O Active Channels Prepared by Atomic-Layer Deposition-Reference-Cited by-同舟云学术

Effects of Deposition Temperature on the Device Characteristics of Oxide Thin-Film Transistors Using In–Ga–Zn–O Active Channels Prepared by Atomic-Layer Deposition

Published:2017-06-27 Issue:27 Volume:9 Page:22676-22684
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Yoon Sung-Min¹^ORCID,Seong Nak-Jin²,Choi Kyujeong²,Seo Gi-Ho¹,Shin Woong-Chul²

Affiliation:

1. Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin, Gyeonggi-do 17104, Korea

2. NCD Co. Ltd., Yuseong-gu, Daejeon 34015, Korea

Funder

Kyung Hee University

Ministry of Science, ICT and Future Planning

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.7b04637

Reference35 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. Amorphous InGaZnO Thin-Film Transistors Compatible With Roll-to-Roll Fabrication at Room Temperature

3. High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering

4. Solution-processed InGaZnO-based thin film transistors for printed electronics applications

5. Thin film atomic layer deposition equipment for semiconductor processing

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