High-Performance Fully Thermal ALD-Processed IGZO Thin Film Transistors-Reference-Cited by-同舟云学术

High-Performance Fully Thermal ALD-Processed IGZO Thin Film Transistors

Published:2024-03 Issue:3 Volume:71 Page:1963-1968
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Chen Zihui¹,Yang Jun²,Ding Xingwei³^ORCID,Li Xifeng³^ORCID,Zhang Jianhua¹^ORCID

Affiliation:

1. Shanghai Collaborative Innovation Center of Intelligent Sensing Chip Technology and the School of Microelectronics, Shanghai University, Shanghai, China

2. Institute for Metallic Materials, Leibniz Institute for Solid State and Materials Research, Dresden, Germany

3. Shanghai Collaborative Innovation Center of Intelligent Sensing Chip Technology, Key Laboratory of Advanced Display and System Application, Ministry of Education, Shanghai University, Shanghai, China

Funder

National Natural Science Foundation of China

Science and Technology Commission of Shanghai Municipality Program

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/16/10457976/10423607.pdf?arnumber=10423607

Reference31 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. Encapsulation of locally welded silver nanowire with water-free ALD-SbO_x for flexible thin-film transistors

3. Developing Subthreshold-Swing Limit of PEALD In–Sn–Ga–O Transistor via Atomic-Scaled Sn Control

4. Photofield‐effect in amorphous In‐Ga‐Zn‐O (a‐IGZO) thin‐film transistors

5. Sol-gel derived low temperature HfO2-GPTMS hybrid gate dielectric for a-IGZO thin-film transistors (TFTs)

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1. High-performance single-crystalline In2O3 field effect transistor toward three-dimensional large-scale integration circuits;Communications Materials;2024-09-11

2. Flexible IGZO TFT Technology for Shift Register Drivers;Advanced Electronic Materials;2024-07

3. Reliability issues of amorphous oxide semiconductor-based thin film transistors;Journal of Materials Chemistry C;2024