Thin film atomic layer deposition equipment for semiconductor processing-Reference-Cited by-同舟云学术

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Thin film atomic layer deposition equipment for semiconductor processing

Published:2002-01 Issue:1-2 Volume:402 Page:248-261
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Sneh Ofer,Clark-Phelps Robert B,Londergan Ana R,Winkler Jereld,Seidel Thomas E

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference44 articles.

1. Layered tantalum-aluminum oxide films deposited by atomic layer epitaxy

2. Tailoring the dielectric properties of HfO2–Ta2O5 nanolaminates

3. Properties of Ta2 O 5‐Based Dielectric Nanolaminates Deposited by Atomic Layer Epitaxy

4. Properties of atomic layer deposited (Ta1−xNbx)2O5 solid solution films and Ta2O5–Nb2O5 nanolaminates

5. Titanium oxide/aluminum oxide multilayer reflectors for “water-window” wavelengths

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