Capacitorless DRAM Cells Based on High-Performance Indium-Tin-Oxide Transistors With Record Data Retention and Reduced Write Latency-Reference-Cited by-同舟云学术

Capacitorless DRAM Cells Based on High-Performance Indium-Tin-Oxide Transistors With Record Data Retention and Reduced Write Latency

Published:2023-01 Issue:1 Volume:44 Page:60-63
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Hu Qianlan¹^ORCID,Gu Chengru²,Zhu Shenwu²,Li Qijun²,Tong Anyu¹,Kang Jiyang²,Huang Ru¹,Wu Yanqing¹^ORCID

Affiliation:

1. School of Integrated Circuits, Peking University, Beijing, China

2. Wuhan National High Magnetic Field Center and the School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, China

Funder

National Key Research and Development Program of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/10001839/09964242.pdf?arnumber=9964242

Reference20 articles.

1. Low-Power and Scalable Retention-Enhanced IGZO TFT eDRAM-Based Charge-Domain Computing

2. Computational Associative Memory Based on Monolithically Integrated Metal-Oxide Thin Film Transistors for Update-Frequent Search Applications

3. Technology Scaling Challenge and Future Prospects of DRAM and NAND Flash Memory

4. Technology scaling challenges and opportunities of memory devices

5. 10-nm channel length indium-tin-oxide transistors with Ion = 1860 ?A/?m, Gm = 1050 ?S/?m at Vds = 1 V with BEOL compatibility;li;IEDM Tech Dig,2020

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