Role of oxygen vacancies in V/sub BF//V/sub t/ stability of pFET metals on HfO/sub 2/-Reference-Cited by-同舟云学术

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Role of oxygen vacancies in V/sub BF//V/sub t/ stability of pFET metals on HfO/sub 2/

Published: Issue: Volume: Page:
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Container-title:Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005.
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Author:

Cartier E.,McFeely F.R.,Narayanan V.,Jamison P.,Linder B.P.,Copel M.,Paruchuri V.K.,Basker V.S.,Haight R.,Lim D.,Carruthers R.,Shaw T.,Steen M.,Sleight J.,Rubino J.,Deligianni H.,Guha S.,Jammy R.,Shahidi G.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/9911/31516/01469279.pdf?arnumber=1469279

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Multi-Vt Performance Dependence on Capping Layer Position by NPT for PMOS Device Applications;ECS Journal of Solid State Science and Technology;2019

2. Lowering the effective work function via oxygen vacancy formation on the GeO2/Ge interface;Solid-State Electronics;2017-04

3. Photoemission study on electrical dipole at SiO2/Si and HfO2/SiO2interfaces;Japanese Journal of Applied Physics;2017-03-16

4. Evaluation of valence band top and electron affinity of SiO2and Si-based semiconductors using X-ray photoelectron spectroscopy;Japanese Journal of Applied Physics;2016-07-12

5. Investigation of trap properties of Hf0.83Zr0.17O2high-kgate stack p-type MOSFETs by low-frequency (1/f) noise and random telegraph noise analyses;Japanese Journal of Applied Physics;2014-07-18

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